Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions

In order to suppress the occurrence of nonradiative recombination traps during an etching and regrowth process, whose origin was considered to be large latticemismatch, a partially strain-compensated five-quantum-well structure was used for 1.5 µm GaInAsP/InP lasers with wirelike active regions (wire widths of 43 nm and 70 nm) fabricated by electron beam lithography, CH 4 /H 2 reactive-ion etching and organo-metallic vapor-phase-epitaxial regrowth. As a result, we realized wirelike lasers with wire widths of 43 nm with a threshold current lower than those of quantum film lasers prepared on the same wafer at temperatures up to 85°C, for the first time.