Electrical characterization of Pb centers in (100)Si–SiO2 structures: The influence of surface potential on passivation during post metallization anneal

Capacitance–voltage measurements were made on Cr-gated metal–oxide–silicon structures with ultrathin (∼30 Å) thermal oxides. Using an empirical model, activation energies for the passivation of the Pb center were determined and found to be dependent on the charge state of the defect. Depassivation was found to occur at positive gate biases.