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November 23, 2000Electronics Letters

5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

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Authors

GSG. SiminUniversity of South CarolinaXHX. HuUniversity of Electronic Science and Technology of ChinaNIN. D. Il’inskayaIoffe Institute

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Simin et al. (2000) studied this question.

synapsesocial.com/papers/6a75cc32f1e99ff85ab216cahttps://doi.org/10.1049/el:20001401
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