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March 2, 2000Electronics Letters

High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE

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Authors

NNNam NguyenChildren's Hospital of Los AngelesMMM. MicovicHRL Laboratories (United States)WWWei-Ting WongRenesas Electronics (United States)

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Nguyen et al. (2000) studied this question.

synapsesocial.com/papers/6a86ca29a810ea404bcf85eehttps://doi.org/10.1049/el:20000352
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Device characteristics of scaled GaN/AlGaN MODFETs1998 · 30 citations
  2. 2Drain current compression in GaN MODFETs underlarge-signalmodulation at microwave frequencies1999 · 135 citations
  3. 3High performance GaN/AlGaN MODFETsgrown by RF-assisted MBE1998 · 33 citations
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  5. 5GaN/AlGaN MODFET with 80 GHz f max and >100 V gate-drain breakdown voltage1997 · 35 citations