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April 1, 2000Japanese Journal of Applied Physics

High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

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Authors

HYHiroshi YanoUniversity of TsukubaTHTaichi Hirao Taichi HiraoKyoto UniversityTKTsunenobu Kimoto Tsunenobu KimotoKyoto University

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Yano et al. (2000) studied this question.

synapsesocial.com/papers/6a8a76a0754a5a619a7241a3https://doi.org/10.1143/jjap.39.2008
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Also Consider

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  1. 1High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face1999 · 215 citations
  2. 21.1 kV 4H-SiC power UMOSFETs1997 · 125 citations
  3. 3Electron Mobility Measurements in SiC Polytypes1967 · 58 citations
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  5. 5Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface1996 · 70 citations