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July 1, 1998IEEE Electron Device Letters

4H-SiC MOSFETs utilizing the H2 surface cleaning technique

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Authors

KUK. UenoThe University of OsakaRAR. AsaiTTTakeshi TsujiThe University of Tokyo

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Ueno et al. (1998) studied this question.

synapsesocial.com/papers/6a903756e02ba012352da554https://doi.org/10.1109/55.701431
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