Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC

A method to form SiO2/SiC metal–oxide–semiconductor structures by oxidation of a thin polycrystalline silicon (polysilicon) layer deposited on SiC is demonstrated. The oxidation time used is sufficient to oxidize all the polysilicon while short enough at 1050 °C to insure insignificant oxidation of the underlying SiC. Since the oxidation of SiC is highly anisotropic, this method allows uniform oxide formation on a nonplanar SiC surface. The SiO2/SiC interface quality is comparable to that obtained with thermal oxidation.