High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage

In this letter, we report on demonstrating high-performance enhancement-mode (E-mode)p-channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposedp-GaN/AlN/AlGaN epitaxial structure with a low sheet resistance of 14kΩ / 0x25A1. Benefiting from the 25-nm-wide GaN nanowires channel and tri-gate architecture, high threshold voltage (VTH) of −2.2 V and low subthreshold swing (SS) of 130 mV/dec were obtained. Meanwhile, owing to the removal of etching damage in the recessed region and the post gate annealing, high drain current density of 18.5 mA/mm and highION / IOFFratio of3×108were acquired. The E-modep-channel GaN FinFET fabricated on the reformative epitaxial structure with lower sheet resistance shows the potential to be one step closer to realizing the vision of GaN CMOS technology.