There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.
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Kizilyalli et al. (2014) studied this question.
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