Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 1, 1974IEEE Journal of Solid-State Circuits

High-voltage simultaneous diffusion silicon-gate CMOS

View Full Paper
Ask AI
Bookmark
Share

Authors

RBRichard BlanchardLoughborough UniversityPGPaolo A. GarginiInstitute of Electrical and Electronics EngineersGMG. MayIBM (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Blanchard et al. (1974) studied this question.

synapsesocial.com/papers/6a763c8714e3fbc144bcb2d9https://doi.org/10.1109/jssc.1974.1050476
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Some reliability considerations pertaining to LSI technology1971 · 9 citations
  2. 2Effect of surface fields on the breakdown voltage of planar silicon p-n junctions1967 · 175 citations