MOCVD of ZnO Films from Bis(Ketoiminato)Zn(II) Precursors: Structure, Morphology and Optical Properties

Two closely related bis (ketoiminato) zinc precursors, which are air stable and possess favorable properties for metal‐organic (MO)CVD, are successfully employed for the growth of ZnO films on silicon and borosilicate glass substrates at temperatures between 400 and 700 °C. The as‐deposited films are investigated by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), nuclear reaction analysis (NRA), as well as by UV‐vis absorption spectroscopy and photoluminescence (PL) measurements. The structure, morphology, and composition of the as‐grown films show a strong dependence on the substrate temperature. The formation of pure and (001)‐oriented wurtzite ‐type stoichiometric ZnO is observed. PL measurements are performed both at room temperature and 77 K, revealing a defect‐free emission of ZnO films.