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An advanced silicon drift detector, a large-area cylindrical drift detector, was developed. The authors focus on the design aspects of the detector. They study the transport of electrons in a cylindrical geometry. The consequences of the transport analysis for the pitch of anodes and for the number of readout channels is shown. The flow of the leakage current generated at the Si-SiO/sub 2/ interface into a sink anode is considered. The diversion of the leakage current away from the signal anodes improves the performance of the detector. The increase of the current generation on the Si-SiO/sub 2/ interface due to anticipated radiation damage effects the detector less. Some results obtained from laboratory tests and from the operation of the detector at the NA45 experiment at CERN are shown.>
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Chen et al. (1992) studied this question.
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