Recent time resolved optical measurements of carrier and exciton recombination in different SiC polytypes are presented. The recombination of bound excitons, both bound at the nitrogen donor and at the Al acceptor, is extremely fast in 4H and 6H SiC. These recombinations are thus dominated by efficient non-radiative recombinations, assumed to be a phononless Auger process. In high quality epitaxial layers where a free exciton is present, all decay times are determined by the free exciton lifetime. Time resolved luminescence measurements have also been used to measure the minority carrier lifetime mainly in 4H SiC. A significant improvement of the minority carrier lifetime has been obtained in the last two years, with values as high as 2 μs.
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Bergman et al. (1997) studied this question.
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