Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1991Japanese Journal of Applied PhysicsOpen Access

In Situ Monitoring of GaN Growth Using Interference Effects

View Full Paper
Ask AI
Bookmark
Share

Authors

SNShuji Nakamura Shuji NakamuraUniversity of California, Santa Barbara

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Shuji Nakamura Shuji Nakamura (1991) studied this question.

synapsesocial.com/papers/6a7936745968508e56f368b8https://doi.org/10.1143/jjap.30.1620
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer1990 · 199 citations
  2. 2Apparent temperature oscillations during molecular-beam epitaxy: A useful interferometric effect1990 · 16 citations
  3. 3In Situ Optical Monitoring of the GaAs Growth Process in MOCVD1990 · 56 citations
  4. 4Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations
  5. 5Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe1991 · 17 citations