Answers are grounded in this paper and cite their sources.
We present a comparative study of device degradation for conventional n- and p-channel MOSFET's. The experimentally determined features of degradation are investigated with a 2-D simulation including fast and slow interface states as well as channel mobility degradation due to Coulomb scattering off these charges. Three different models concerning kind and spatial distribution are studied. We present a model that self-consistently describes the observed experimental features in the pentode and subthreshold regimes of the device. Furthermore, the substrate current is included in this analysis.
No takes yet. Share an insight, caveat, or question.
Schwerin et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: