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We report on a new passivation procedure of the GaAs surface based on a thermal treatment under a PH3 overpressure. This treatment results, by As/P exchange, in the formation of a thin superficial GaP layer which prevents the formation of an arsenic oxide, as observed by x-ray photoelectron spectroscopy analysis. Subsequent increase of the photoluminescence signal indicates improved electronic properties of GaAs surfaces as a result of this passivation procedure.
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Viktorovitch et al. (1991) studied this question.
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