Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation S.-B. Wang, A. E. Wendt; Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity. J. Vac. Sci. Technol. A 1 September 2001; 19 (5): 2425–2432. https://doi.org/10.1116/1.1387056 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search