Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes

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We have studied the electrical and optical properties of homoepitaxially grown InGaN/GaN multiquantum-well light-emitting diodes over a wide range of temperatures and currents. We found thermionic emission rather than tunneling transport to be the most probable mechanism responsible for radiative recombination processes. As we point out, the thermal activation energies of Si donors in the n-type GaN and Mg acceptors in the p-type GaN can explain the temperature dependence of the device series resistance. Furthermore, the presence of strong localization effects in the active InGaN layers can be deduced from the observed considerable blueshifts of the electroluminescence emission peak with increasing temperature and current. We found the values of the internal and external quantum efficiencies of homoepitaxially grown light emitting diodes to be 38% and 1.9%, respectively.