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The impact ionization coefficients for electrons and holes in (100) oriented Ga0.18In0.82As0.39P0.61 whose band gap is 1.11 eV have been obtained from photomultiplication measurements on a Cd diffused p+n abrupt junction having a donor concentration of 2.5×1016 cm−3. The electron-to-hole ionization coefficient ratio has been found to be about 1.1 in the electric field range 4.0×105–5.0×105 V/cm.
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Osaka et al. (1984) studied this question.
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