We investigated the effect of high-pressure hydrogen annealing (HPHA) on a -doped Schottky junction for nonvolatile memory applications. Hysteretic current-voltage ( I - V ) characteristic curves reveal that the HPHA-treated Schottky junction interface has a higher resistance ratio than the control sample in dc bias sweep. The HPHA sample also exhibits switching behavior by pulsed voltage stress with excellent electrical characteristics including voltage pulse duration as short as , endurance cycles of up to times, and retention time as long as . These indicate that HPHA improved resistance switching characteristics of the Schottky junction.
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Seong et al. (2007) studied this question.
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