Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

We reported the influence of interface trap density ( N t ) on the electrical properties of amorphous InSnZnO based thin-film transistors, which were fabricated at different direct-current (DC) magnetron sputtering powers. The device with the smallest N t of 5.68 × 10 11 cm −2 and low resistivity of 1.21 × 10 −3 Ω·cm exhibited a turn-on voltage ( V ON ) of −3.60 V, a sub-threshold swing (S.S) of 0.16 V/dec and an on-off ratio ( I ON / I OFF ) of ∼8 × 10 8 . With increasing N t , the V ON , S.S and I ON / I OFF were suppressed to −9.40 V, 0.24 V/dec and 2.59 × 10 8 , respectively. The V TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices. The result showed that the reduction in N t contributes to an improvement in the electrical properties and stability.