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Heavy Si doping of GaAs and AlAs/n-GaAs superlattice prepared by molecular beam epitaxy has been studied. By lowering the substrate temperature below 420°C during the growth, carrier concentrations of 1.8×10 19 cm -3 with a perfect mirror surface morphology were realized for GaAs and AlAs/n-GaAs superlattice, respectively. The high carrier concentration is ascribed to the suppression of Si-Si pair formation by the low temperature growth procedure.
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Ogawa et al. (1985) studied this question.
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