Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method

Models of hot-carrier-induced phenomena in the high-energy region for small-scale MOSFETs are presented. A free-flight optimization technique has also been developed to simulate the high-energy carrier dynamics by the Monte Carlo method with reasonable CPU time. The hot-carrier effect was investigated in detail from the carrier velocity and energy distribution viewpoint with rigorous treatment of carrier scattering processes, especially for photogeneration and impact ionization. The simulated results were in good agreement with experimental results. The analyses revealed that the hot-carrier effect is mainly dominated by carrier temperature, but is suppressed by impact ionization.>