Answers are grounded in this paper and cite their sources.
Extremely shallow, below ∼80 nm, n+ junctions fabricated with antimony have been analytically and electrically investigated. It is shown that by the use of antimony one can reach sheet resistivity/ shallowness combinations that are superior to those achievable with arsenic. The leakage of these junctions was found to be sufficiently low to allow VLSI applications. These investigations indicate that below a certain junction depth antimony should be the dopant of preference.
No takes yet. Share an insight, caveat, or question.
Sai-Halasz et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: