What question did this study set out to answer?

To evaluate the current–voltage characteristics and carrier transport mechanisms of erbium-silicided n-type Schottky barrier tunnel transistors.

September 25, 2003Applied Physics Letters

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

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Authors

MJMoongyu JangHallym University JOJihun OhKorea Advanced Institute of Science and Technology SMSunglyul MaengKumoh National Institute of Technology

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Implication

Device characterization study demonstrates an on/off ratio of 10⁵ in 60-nm erbium-silicided tunnel transistors, revealing drain-induced barrier thinning alters leakage currents.

Key Points

To evaluate the current–voltage characteristics and carrier transport mechanisms of erbium-silicided n-type Schottky barrier tunnel transistors.
Fabricated n-type Schottky barrier tunnel transistors with 60 nm gate lengths using erbium silicide contacts.
Measured drain current responses across varying gate and drain voltages alongside numerical device simulations.
Exhibited standard transistor switching behavior with a drain current on/off ratio of approximately 10⁵ at low drain voltages.
Observed a decrease in the on/off ratio at higher drain voltages due to barrier thinning, where off-current was dominated by thermionic emission and drain current by tunneling.

Cite This Study

Jang et al. (2003) studied this question.

synapsesocial.com/papers/6a7d3d882d005ba2c41ccd33 https://doi.org/10.1063/1.1614441

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Implication

Device characterization study demonstrates an on/off ratio of 10⁵ in 60-nm erbium-silicided tunnel transistors, revealing drain-induced barrier thinning alters leakage currents.

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

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Member takes

Implication

Key Points

Cite This Study

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Discussion

Member takes

Implication

Key Points

Cite This Study

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