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November 25, 1993Electronics Letters

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

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Authors

FKFumio KoyamaTokyo Institute of TechnologyKLK.-Y. LiouMultiple Sclerosis Center of AtlantaADA.G. DentaiInfinera (United States)

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Koyama et al. (1993) studied this question.

synapsesocial.com/papers/6a7e2be784a8fb417af70f9chttps://doi.org/10.1049/el:19931407
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Also Consider

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  1. 1Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator1987 · 96 citations
  2. 2Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth1991 · 159 citations
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  4. 4High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers1987 · 24 citations
  5. 5Measurement of chirp parameter in GaInAs/GaInAsP quantum well electroabsorption modulators by using intracavity modulation1993 · 2 citations