Au-n+-type InP Schottky diodes have been fabricated using anodic oxidation and etching with aqueous HCl. The electrical characteristics are measured and discussed based upon the effects of surface states between the gate metal and semiconductor. Typical values of the barrier height, ideality factor and surface state density are evaluated as 0.55 eV, 1.34 and 4.2×1012 cm−2 eV−1, respectively. The mean electron affinity at the semiconductor surface is found to be about 0.5-eV-smaller than the bulk electron affinity. Further, the stability of the diode characteristics has been examined.
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Hattori et al. (1981) studied this question.
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