What question did this study set out to answer?

To evaluate the feasibility of using an adjustable air gap as the insulating layer for differential capacitance and conductance measurements on semiconductor surfaces.

July 1, 1984Applied Physics Letters

Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

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Authors

JMJohn MorelandPurdue University Northwest JDJeff DruckerArizona State University PHP. K. HansmaUniversity of California, Santa Barbara

Discussion

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Implication

Experimental study demonstrates standard capacitor response across an air insulator on n-type silicon, suggesting an adjustable method for semiconductor surface analysis.

Key Points

To evaluate the feasibility of using an adjustable air gap as the insulating layer for differential capacitance and conductance measurements on semiconductor surfaces.
Fabricated a metal-air-semiconductor capacitor using a lead (Pb) disk electrode suspended 1700–3600 Å over an n-type Si ⟨111⟩ substrate.
Measured differential capacitance versus voltage (C-V) and differential conductance versus voltage (G-V) across the adjustable air dielectric.
Obtained stable differential capacitance and conductance curves across electrode-to-surface spacings ranging from 1700 to 3600 Å.
Reproduced the voltage-dependent electrical response profiles characteristic of conventional solid metal-oxide-semiconductor capacitors without requiring a permanent oxide layer.

Cite This Study

Moreland et al. (1984) studied this question.

synapsesocial.com/papers/6a7e318dd2dab736758561f9 https://doi.org/10.1063/1.95003

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July 1, 1984Applied Physics Letters

Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces

View Full Paper

Ask AI

Bookmark

Authors

JMJohn MorelandPurdue University Northwest JDJeff DruckerArizona State University PHP. K. HansmaUniversity of California, Santa Barbara

Discussion

Member takes

Implication

Experimental study demonstrates standard capacitor response across an air insulator on n-type silicon, suggesting an adjustable method for semiconductor surface analysis.

Key Points

To evaluate the feasibility of using an adjustable air gap as the insulating layer for differential capacitance and conductance measurements on semiconductor surfaces.
Fabricated a metal-air-semiconductor capacitor using a lead (Pb) disk electrode suspended 1700–3600 Å over an n-type Si ⟨111⟩ substrate.
Measured differential capacitance versus voltage (C-V) and differential conductance versus voltage (G-V) across the adjustable air dielectric.
Obtained stable differential capacitance and conductance curves across electrode-to-surface spacings ranging from 1700 to 3600 Å.
Reproduced the voltage-dependent electrical response profiles characteristic of conventional solid metal-oxide-semiconductor capacitors without requiring a permanent oxide layer.

Cite This Study

Moreland et al. (1984) studied this question.

synapsesocial.com/papers/6a7e318dd2dab736758561f9 https://doi.org/10.1063/1.95003

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