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A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on the DRAM cells. Both the radiation response of a single DRAM cell and the response of all cells as a statistical whole are analyzed.
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Scheick et al. (2000) studied this question.
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