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Transmission electron microscopy (TEM) of cross-sectional specimens is used to image the radiation damage distribution near mask edges in B +-implanted Si structures. The lateral spread of the radiation damage is calculated for arbitrarily shaped mask edges. Agreement between theoretical calculations and experimental results shows the need to take account of lateral spread in ion-implanted very-large-scale-integrated semiconductor devices (VLSI).
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Krimmel et al. (1978) studied this question.
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