A high-crystallinity, low-resistance Pr0.7Ca0.3MnO3(PCMO) thin film deposited by sputtering at 600°C showed no resistive switching with a Pt∕Pr0.7Ca0.3MnO3∕Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr0.7Ca0.3MnO3∕Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch.
No takes yet. Share an insight, caveat, or question.
Fujimoto et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: