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The (1{} 1{} 1{}) surface of GaAs exhibits three stable reconstructions. Two are (2×{}2), As stabilized and Ga stabilized respectively, and the third is ({}19 ×{} {}19 ). Transitions between these structures are obtained by variation of the experimental conditions. We propose new models for all of the above reconstructions, based on ab initio total-energy calculations and experimental information regarding surface composition.
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Kaxiras et al. (1986) studied this question.
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