The motivation and challenges of IC reliability simulation are discussed. The reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation.>
No takes yet. Share an insight, caveat, or question.
Chenming Hu (1992) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: