Monolithic integration of a light-emitting diode array and a silicon circuit using transfer processes

This letter reports the attainment of a monolithically integrated light-emitting diode array on a silicon integrated circuit. The emitters are first formed epitaxially on a lattice-matched substrate and are subsequently transferred to the silicon. Interconnections are made using thin-film techniques between the 128 separately addressable light-emitting diodes and the driver circuit. This work demonstrates attainment of a high level of optoelectronic/logic integration.