Intersubband transitions for single, double and triple Si  -doped GaAs layers

The intersubband transitions in single, double and triple Si δ-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband energies and the eigen envelope wave functions have been calculated by solving the Schrödinger and Poisson equations self-consistently. We have seen that the intersubband transitions are very sensitive to the type of structure and are dependent on the applied electric field. The electric field and structure dependence of the intersubband optical absorption is interesting for potential device applications in a class of photodetectors and optical modulators.