Ga(As,P) strained-layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constant

We have measured both the lattice constant and the optical transitions in GaP/GaAsxP1−x strained-layer superlattices (SLSs) as a function of composition x from x=0 to 0.6. By comparing these results to those for the alloys GaAsx̄P1−x̄ where x̄=x/2 corresponds to the same average compositions as the SLSs, we demonstrate for the first time in a ternary system, a semiconductor crystal with a band gap that can be varied independently of its lattice constant.