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September 1, 2003Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

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Authors

WHW. HenschelPort Authority of New York and New JerseyYGYordan M. GeorgievBulgarian Academy of SciencesHKH. KurzUniversitätsklinikum Würzburg

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Henschel et al. (2003) studied this question.

synapsesocial.com/papers/6a82a2a968df11fa7b6d0112https://doi.org/10.1116/1.1603284
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Proximity effect in electron-beam lithography1975 · 546 citations
  2. 2Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations1998 · 295 citations
  3. 3Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane2000 · 33 citations
  4. 4Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface1999 · 21 citations