Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 15, 1995Journal of Applied Physics

Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures

View Full Paper
Ask AI
Bookmark
Share

Authors

ABAlexei BykhovskiNorth Carolina State UniversityBGBoris GelmontUniversity of VirginiaM. S. ShurM. S. ShurUniversity Graduate Center

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Bykhovski et al. (1995) studied this question.

synapsesocial.com/papers/6a82a39f979d337bd4440a69https://doi.org/10.1063/1.359947
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure1993 · 271 citations
  2. 2Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy1990 · 102 citations
  3. 3Crystal Interfaces. Part II. Finite Overgrowths1963 · 677 citations
  4. 4Electrical measurements on <i>n</i>+-GaAs-undoped Ga0.6Al0.4 As-<i>n</i>-GaAs capacitors1983 · 55 citations
  5. 5Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy1994 · 220 citations