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April 1, 1976IEEE Transactions on Electron Devices

Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure

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Authors

HIH. IizukaKitasato UniversityFMF. MasuokaON Semiconductor (United States)TSTai SatôToshiba (Japan)

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Iizuka et al. (1976) studied this question.

synapsesocial.com/papers/6a82a4490de57fd8eeb289ffhttps://doi.org/10.1109/t-ed.1976.18415
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