An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5790 A/W and optical conversion gain of 10810 at 400-nW incident optical power level. Its novel guard-ring emitter structure can suppress peripheral recombination current more effectively, provide capability to enhance and tune the optical conversion gain at low-incident optical power and reduce the effective emitter area.
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Dejun et al. (1997) studied this question.
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