Improvement of Voltage Linearity in High-<tex>$kappa$</tex>MIM Capacitors Using<tex>hbox HfO₂hbox --hbox SiO₂</tex>Stacked Dielectric

It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO2dielectrics. A MIM capacitor with capacitance density of 6 fFμm2and quadratic VCC of only 14 ppm/V2has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm2up to 4 V at 125 /spl deg/C.