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We have a number of issues with the above paper “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm,” by Y. Xuan, Y. Q. Wu, and P. D. Ye, publishedIEEE Electron Device Lettersin April 2008 which we wish to highlight.
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Thayne et al. (2008) studied this question.
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