Answers are grounded in this paper and cite their sources.
We describe a resonant cavity detector which uses epitaxial p-type SiGe-Si quantum wells for absorption which are epitaxially grown above a high reflectance tungsten silicide layer. The device operates in the 8-12 μm band in normal incidence and exhibits a ×8 enhancement in its peak photoresponse when compared to a nonresonant control device. The black body responsivity is comparable to current n-GaAs-AlGaAs detectors at 1 V making it suitable for integration in a monolithic Si-based focal plane array. Ways to optimize the device design to achieve improved performance are discussed.
No takes yet. Share an insight, caveat, or question.
Carline et al. (1998) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: