A resonant-tunnelling hot-electron phototransistor (RTHEPT) utilizing intraband absorption of radiation is reported. The mechanism of operation is the resonant-tunnelling process controlled by electron photoemission from the base into the collector. The photoelectric performance of the RTHEPT is evaluated using an analytical model. It is shown that the RTHEPT exhibits optical bistability. RTHEPTs can be used as optoelectronic switching devices and photodetectors for infrared radiation.
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V. Ryzhii (1994) studied this question.
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