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Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy with atomic hydrogen irradiation have been investigated by photoluminescence (PL) method. Narrow PL linewidths have been obtained for samples grown at a low-temperature of 330° C with atomic hydrogen and without any growth interruptions. This is due to enhanced Ga migration on GaAs (100) surface under the presence of atomic hydrogen thereby resulting in atomically smooth interfaces. It has also been shown that the PL intensities can be improved as the non-radiative recombination centers could be effectively passivated by the hydrogen atoms.
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Okada et al. (1994) studied this question.
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