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January 1, 1966Journal of The Electrochemical SocietyOpen Access

Improved Properties of Silicon Dioxide Layers Grown Under Bias

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AGA. GoetzbergerFraunhofer Institute for Solar Energy Systems

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Cite This Study

A. Goetzberger (1966) studied this question.

synapsesocial.com/papers/6a838447b89212e03e9ef147 https://doi.org/10.1149/1.2423887

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