Unified field-effect transistor theory including velocity saturation

It is shown that in any kind of field-effect transistor structure, the usual gradual channel approximation solutions developed for v=/spl mu//SUB 0/E also hold in a slightly modified form for v=/spl mu//SUB 0/E/|1+(/spl mu//SUB 0/E/v/SUB s/)| which gives a good approximation to the velocity field relationship in silicon FETs.