Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Quantum confinement effects in strained silicon-germanium alloy quantum wells1992 · 69 citations
2. 2Near band-edge photoluminescence from Si1−<i>x</i>Ge<i>x</i>/Si superlattices grown by molecular-beam epitaxy1992 · 44 citations
3. 3Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers1992 · 69 citations
4. 4Near-band-gap photoluminescence from pseudomorphic Si1−<i>x</i>Ge<i>x</i> single layers on silicon1992 · 202 citations
5. 5Near-band-gap photoluminescence of Si1−<i>x</i>Ge<i>x</i> alloys grown on Si(100) by molecular beam epitaxy1990 · 121 citations