Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 29, 1990Applied Physics Letters

Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

KTKoichi TerashimaNEC (Japan)MTMichio TajimaJGC (Japan)TTToru TatsumiRyukoku University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Terashima et al. (1990) studied this question.

synapsesocial.com/papers/6a83ea8d8dcee831255bd4d0https://doi.org/10.1063/1.104014
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Details of the structure of bound excitons and bound multiexciton complexes in Si1977 · 92 citations
  2. 2Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy1988 · 148 citations
  3. 3Lattice Vibration Spectra of Germanium-Silicon Alloys1963 · 70 citations
  4. 4Photoluminescence of MBE Grown Si1 − x Ge x Films1988 · 8 citations
  5. 5Electron-hole drops in Ge-Si alloys1974 · 18 citations