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October 5, 1992Applied Physics Letters

Observation of deep-level-free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy

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NUNoritaka UsamiInstitute for SustainabilitySFS. FukatsuTokyo University of the ArtsYSY. ShirakiMitsubishi Electric (Japan)

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Usami et al. (1992) studied this question.

synapsesocial.com/papers/6a83ea8d8dcee831255bd4c9https://doi.org/10.1063/1.108430
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Spectral blue shift of photoluminescence in strained-layer Si1−xGex/Si quantum well structures grown by gas-source Si molecular beam epitaxy1992 · 73 citations
  2. 2Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy1992 · 29 citations
  3. 3Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers1992 · 69 citations
  4. 4Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth1991 · 219 citations
  5. 5Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy1990 · 121 citations